absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 11.7 i d @ v gs = 12v, t c = 100c continuous drain current 7.4 i dm pulsed drain current 47 p d @ t c = 25c max. power dissipation 25 w linear derating factor 0.2 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 173 mj i ar avalanche current 11.7 a e ar repetitive avalanche energy 2.5 mj dv/dt peak d iode recovery dv/dt 4.9 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063 in./1.6mm from case for 10s) weight 0.98 (typical) g pre-irradiation international rectifiers r5 tm technology provides high performance power mosfets for space applications. these devices have been characterized for single event effects (see) with useful performanceup to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dcto dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. o c a radiation hardened jansr2n7493t2 power mosfet thru-hole (to-39) ref: mil-prf-19500/701 www.irf.com 1 100v, n-channel technology features: single event effect (see) hardened ultra low r ds(on) identical pre- & post-electrical test conditions repetitive avalanche ratings dynamic dv/dt ratings simple drive requirements ease of paralleling hermetically sealed for footnotes refer to the last page to-39 irhf57130 product summary part number radiation level r ds(on) i d qpl part number irhf57130 100k rads (si) 0.08 ? 11.7a jansr2n7493t2 irhf53130 300k rads (si) 0.08 ? 11.7a jansf2n7493t2 irhf54130 500k rads (si) 0.08 ? 11.7a jansg2n7493t2 irhf58130 1000k rads (si) 0.10 ? 11.7a jansh2n7493t2 pd-93789f downloaded from: http:///
irhf57130, jansr2n7493t2 pre-irradiation 2 www.irf.com thermal resistance parameter min typ max units t est conditions r thjc junction-to-case 5.0 r thja junction-to-ambient 175
c/w note: corresponding spice and saber models are available on international rectifier web site. for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) 11.7 i sm pulse source current (body diode) 47 v sd diode forward voltage 1.5 v t j = 25c, i s = 11.7a, v gs = 0v t rr reverse recovery time 202 ns t j = 25c, i f = 11.7a, di/dt 100a/ s q rr reverse recovery charge 850 cv dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 100 v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown 0.12 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 0.08 ? v gs = 12v, i d = 7.4a resistance v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 8.7 s v ds = 15v, i ds = 7.4a i dss zero gate voltage drain current 10 v ds = 80v ,v gs = 0v 2 5 v ds = 80v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 50 v gs =12v, i d = 11.7a q gs gate-to-source charge 7.4 nc v ds = 50v q gd gate-to-drain (miller) charge 20 t d (on) turn-on delay time 25 v dd = 50v, i d = 11.7a t r rise time 100 v gs =12v, r g = 7.5 ? t d (off) turn-off delay time 35 t f fall time 30 l s + l d total inductance 7.0 measured from drain lead (6mm /0.25in. from package) to source lead (6mm /0.25in. from package) with source wires internally bonded from source pin to drain pad c iss input capacitance 1038 v gs = 0v, v ds = 25v c oss output capacitance 362 p f f = 1.0mhz c rss reverse transfer capacitance 45 na nh ns a downloaded from: http:///
www.irf.com 3 pre-irradiation irhf57130, jansr2n7493t2 table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter up to 500k rads(si) 1 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 100 100 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.5 4.0 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 100 na v gs = 20v i gss gate-to-source leakage reverse -100 -100 v gs = -20 v i dss zero gate voltage drain current 10 25 a v ds = 80v, v gs = 0v r ds(on) static drain-to-source 0.064 0.08 ? v gs = 12v, i d =7.4a on-state resistance (to-3) r ds(on) static drain-to-source 0.08 0.10 ? v gs = 12v, i d =7.4a on-state resistance (to-39) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. radiation characteristics 1. part numbers irhf57130 (jansr2n7493t2), irhf53130 (jansf2n7493t2) and irhf54130 (jansg2n7493t2)2. part number irhf58130 (jansh2n7493t2) fig a. typical single event effect, safe operating area v sd diode forward voltage 1.5 1.5 v v gs = 0v, i s = 11.7a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page 0 20 40 60 80 100 120 -20 -15 -10 -5 0 bias vgs (v) bias vds (v) let=38 5% let=61 5% let=84 5% table 2. typical single event effect safe operating area let ener gy ran g ev d s ( v ) (mev/(mg/cm 2 )) (mev) (m) @vgs = @vgs = @vgs = @vgs = @vgs = 0v -5v -10v -15v -20v 38 5% 300 7.5% 38 7.5% 100 100 100 100 100 61 5% 330 7.5% 31 10% 100 100 100 35 25 84 5% 350 10% 28 7.5% 100 100 80 25 - downloaded from: http:///
irhf57130, jansr2n7493t2 pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 1000 5 7 9 11 13 15 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 150 c j t = 25 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 11.7a 1 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v downloaded from: http:///
www.irf.com 5 pre-irradiation irhf57130, jansr2n7493t2 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 400 800 1200 1600 2000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 10 20 30 40 50 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 11.7a v = 20v ds v = 50v ds v = 80v ds 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 100 s dc downloaded from: http:///
irhf57130, jansr2n7493t2 pre-irradiation 6 www.irf.com fig 10a. switching time test circuit v ds 90%10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0 2 4 6 8 10 12 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) v gs downloaded from: http:///
www.irf.com 7 pre-irradiation irhf57130, jansr2n7493t2 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 80 160 240 320 400 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 5.2a 7.4a 11.7a v gs downloaded from: http:///
irhf57130, jansr2n7493t2 pre-irradiation 8 www.irf.com pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 80 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 50v, starting t j = 25c, l= 2.53 mh peak i l = 11.7a, v gs = 12v i sd 11.7a, di/dt 216a/ s, v dd 100v, t j 150c case outline and dimensions to-205af (modified to-39) footnotes: ! " # ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 10/2011 downloaded from: http:///
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